The Chinese manufacturer UNIS (a subsidiary of Tsinghua Unigroup) revealed the SSDS PCIE 5.0 squad, which is a strong competitor to anyone Best ssds . The company (across Ethom It claims that the drive speeds of up to 14.9 GB/s, faster than Decisive T705 and Samsung 9100 l Two of the fastest drives PCIE 5.0 consumers.
The S5 family features the S5 and S5 Ultra base, both of which correspond to the M.2 2280 shape and use the PCIE 5.0 X4 interface. After appearing for the first time in China, some units will reach the western markets for review through online channels such as aliexpress.
SSDS is the highest in the PCIE 5.0 serial readings on the stadium from 13 to 14 GB/s, only marginal gains for a few hundred megabytes/s distinguished. The decisive T705 runs a pioneering location in the SSD market, just to be diluted by entering Samsung to the PCIE 5.0 ecosystem with 9100 Pro.
the Micron 4600 Recently join the ranks, sports Phison E26 Beating SM2508 Control the movement of silicon and Micron 276 TLC Nand layer. The difference in random readings becomes clear and clearly written as Samsung and Micron broke the IOPS 2000K barrier.
UNIS S5 Ultra and S5 PCIE 5.0 SSD Specifications
He criticized to pass horizontally
name
UNIS S5 Ultra
Samsung 9100 l
Decisive T705
UNITED S5
Flash memory
TLC Nand
236 Samsung TLC Nand layer
232 TLC Nand layer
TLC Nand
Form
M.2 2280
M.2 2280
M.2 2280
M.2 2280
Console
The unknown 6nm controller
Samsung ownership (Presto)
Phison E26
12nm controller is based on its name
Dirham
Yes
Yes
Yes
no
Serial readings
14.2 GB/s
14.8 GB/s
14.5 GB/s
14.9 GB/s.
Write a sequence
13.4 GB/s
13.4 GB/s
12.7 GB/s
12.9 GB/s
Random readings
1700 kg
2200 km
1550k
1800K
He writes randomly
1600 km
2600 km
1800K
1700 kg
Base UNIS S5 can come out of serial readings and write them from 14.9 GB/second and 12.9 GB/s, respectively, hanging on all other offers in this region. Random reads and also writes in IOPS 1800 thousand and 1700 thousand IOPS. Despite the apparent gravity, it is amazingly used by a 12NM control unit whose name has not been named and has a less dramatic design. At launch, the S5 will be available with a capacity of 1 TB and 2 TB without specific pricing.
S5 ULTRA Promings for PCB Double Design and includes DRAM. It is said that it employs a 6NM control unit, which we think is likely SM2508, also located in Micro 4600. Specifications, aside, read the series and write from top to a relatively slower distance 14.2 GB/s and 13.4 GB/s, respectively, while random readings decrease to 1,700 thousand IOPS and 1,600K IOPS. The S5 Ultra will not appear for the first time only in 2 TB variables and 4 terabytes, which may disappoint budget consumers.
Although it is slower, the S5 Ultra is likely to be better for productivity machines due to the inclusion of DRAM cache. Both SSDS will charm the anecdotal passengers of 1 mm graphic, although active cooling solutions would deal better with the heat resulting from this SSDS, especially in such high speeds. However, this SSDS is said to hit Chinese e -commerce markets soon. We can only verify these speeds demanded through appropriate independent tests, as the first -party standards are often biased.
